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To fully capitalize on the unique properties of 2D materials, cost-effective techniques for producing high-quality 2D flakes at scale are crucial. In this work, we show that dry ball-milling, a commonly used powder-processing technique, can be effectively and efficiently upgraded into an automated exfoliation technique. It is done by adding polymer as adhesives into a ball mill to mimic the well-known tape exfoliation process, which is known to produce 2D flakes with the highest quality but is limited by its extremely low efficiency on large-scale production. Seventeen types of commonly seen polymers, including both artificial and natural ones, have been examined as additives to dry ball-mill hexagonal boron nitride. A parallel comparison between different additives identifies low-cost natural polymers such as starch as promising dry ball-mill additives to produce ultrathin flakes with the largest aspect ratio. The mechanical, thermal, and surface properties of the polymers are proposed as key features that simultaneously determine the exfoliation efficiency, and their ranking of importance in the mechanical exfoliation process is revealed using a machine learning model. Finally, the potential of the polymer-assisted ball-mill exfoliation method as a universal way to produce ultra-thin 2D nanosheets is also demonstrated. 

As the feature size of microelectronic circuits is scaling down to nanometer order, the increasing interconnect crosstalk, resistance-capacitance (RC) delay and power consumption can limit the chip performance and reliability. To address these challenges, new low-kdielectric (k < 2) materials need to be developed to replace current silicon dioxide (k = 3.9) or SiCOH, etc. However, existing low-kdielectric materials, such as organosilicate glass or polymeric dielectrics, suffer from poor thermal and mechanical properties. Two-dimensional polymers (2DPs) are considered promising low-kdielectric materials because of their good thermal and mechanical properties, high porosity and designability. Here, we report a chemical-vapor-deposition (CVD) method for growing fluoride rich 2DP-F films on arbitrary substrates. We show that the grown 2DP-F thin films exhibit ultra-low dielectric constant (in plane k = 1.85 and out-of-plane k = 1.82) and remarkable mechanical properties (Young’s modulus > 15 GPa). We also demonstrated the improved performance of monolayer MoS₂field-effect-transistors when utilizing 2DP-F thin films as dielectric substrates. 

Abstract Halide perovskites are revolutionizing the renewable energy sector owing to their high photovoltaic efficiency, low manufacturing cost, and flexibility. Their remarkable mobility and long carrier lifetime are also valuable for information technology, but fundamental challenges like poor stability under an electric field prevent realistic applications of halide perovskites in electronics. Here, it is discovered that valleytronics is a promising route to leverage the advantages of halide perovskites and derivatives for information storage and processing. The synthesized all‐inorganic lead‐free perovskite derivative, Cs₃Bi₂I₉, exhibits strong light–matter interaction and parity‐dependent optically addressable valley degree of freedom. Robust optical helicity in all odd‐layer‐number crystals with inversion symmetry breaking is observed, indicating excitonic coherence extending well beyond 11 layers. The excellent optical and valley properties of Cs₃Bi₂I₉arise from the unique parallel bands, according to first principles calculations. This discovery points to new materials design principles for scalable valleytronic devices and demonstrates the promise of perovskite derivatives beyond energy applications.